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STCV181K0CY4V中文资料

厂家型号

STCV181K0CY4V

文件大小

1396.17Kbytes

页面数量

5

功能描述

Gallium Nitride 50V, 1000W, 1.8-1.9GHz RF Power Transistor

数据手册

下载地址一下载地址二

生产厂商

INNOGRATION

STCV181K0CY4V数据手册规格书PDF详情

Description

The STCV181K0CY4V is a 1000-watt, internally matched GaN HEMT, designed for 5G cellular

applications with frequencies from 1.8-1.9GHz, enabled by wide band VBW capability to

support IBW up to 100MHz..

It can be configured as asymmetrical Doherty for 4G or 5G application, delivering 120 to 140W

average power, according to normal 9dB back off.

There is no guarantee of performance when this part is used in applications designed

Outside of these frequencies.

Applications

 Asymmetrical Doherty amplifier within N3 5G band and B3 4G band

 L band power amplifier

更新时间:2025-11-1 9:31:00
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正规渠道,只有原装!
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全新原装现货