位置:STAV58010P2 > STAV58010P2详情

STAV58010P2中文资料

厂家型号

STAV58010P2

文件大小

1166.71Kbytes

页面数量

5

功能描述

Gallium Nitride 50V, 10W, DC-6GHz RF Power Transistor

数据手册

下载地址一下载地址二

生产厂商

INNOGRATION

STAV58010P2数据手册规格书PDF详情

Description

The STAV58010P2 is a 10 watt, unmatched GaN HEMT, ideal for general applications up to 6GHz

It features high gain, wide band and low cost, in 4*4.5mm DFN plastic package.

It can support CW, pulse or any modulated signal.

There is no guarantee of performance when this part is used outside of stated frequencies.

Applications

 5G, 4G wireless infrastructure

 Wideband or narrowband power amplifier

 Test instruments

 Civil pulse radar

 Jammer

更新时间:2025-12-3 16:01:00
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