Features

• Integrated driver, control MOSFET Q1 and synchronous MOSFET Q2

• On-chip MOSFET Current sensing and reporting at 5uA/A.

• Input voltage (VIN) range of 4.25 V to 16 V

• VCC and VDRV supply of 4.25 V to 5.5 V

• Output voltage range from 0.225 V up to 5.5 V at VIN = 12 V

• Output current capability of 60 A

• Operation up to 2 MHz

• VDRV under-voltage lockout (UVLO)

• Bootstrap under-voltage protection

• 8mV / °C temperature analog output

• Over-temperature protection and thermal shutdown

• Cycle-by-cycle over current Protection (OCP) and flag

• Control MOSFET short (HSS) detection and flag

• Auto-replenishment on bootstrap capacitor

• Compatible with 3.3 V tri-state PWM Input

• Auto SLEEP mode after 20 μs of PWM Tri-state (1.6 mA typ)

• DEEP SLEEP mode for power saving via EN= low (32 μA typ)

• Small 5 mm x 6 mm x 0.9 mm PQFN package

• Lead free RoHS compliant package

• Compliant to automotive AEC-Q100 Rev H Grade 1 requirements