Features

 Revolutionary semiconductor material - Silicon Carbide

 Benchmark switching behavior

 No reverse recovery/ No forward recovery

 Temperature independent switching behavior

 High surge current capability

 Pb-free lead plating; RoHS compliant

 Junction Temperature range from -40°C to 175°C

 System efficiency improvement over Si diodes

 System cost / size savings due to reduced cooling requirements

 Enabling higher frequency / increased power density solutions

 Higher system reliability due to lower operating temperatures

 Reduced EMI

Potential Applications

 Traction inverter

 Booster / DCDC Converter

 On board Charger / PFC

Description

The 5th Generation CoolSiC™ Automotive Schottky Diode represents Infineon leading edge technology for

Silicon Carbide Schottky Barrier diodes. Thanks to a compact design and a technology based on thin wafers,

this family of products shows improved efficiency over all load conditions resulting from both its thermal

characteristics and low figure of merit (Qc x Vf). This product family has been designed to complement

Infineon’s IGBT and CoolMOS™ portfolio. This ensures meeting the most stringent application requirements in

the 650V voltage class.