Features

• CMOS 3.0 V core with versatile I/O

• Two 1024 Mb (S29GL01GT) in a single 64-ball fortified-BGA package (see the S29GL01GT datasheet for full

specifications)

• 45 nm MIRRORBIT™ process technology

• Single supply (VCC) for read/program/erase (2.7 V to 3.6 V)

• Versatile I/O feature

- Wide I/O voltage (VIO): 1.65 V to VCC

• ×8 and ×16 data bus

• 16-word/32-byte page read buffer

• 512-byte programming buffer

- Programming in page multiples, up to a maximum of 512 bytes

• Sector erase

- Uniform 128-KB sectors

- S70GL02GT: 2048 sectors

• Suspend and Resume commands for program and erase operations

• Status Register, data polling, and ready/busy pin methods to determine device status

• Advanced sector protection (ASP)

- Volatile and non-volatile protection methods for each sector

• Separate 1024-bye one time program (OTP) array with two lockable regions

- Each device supports common flash interface (CFI)

• WP# input

- Protects the last sector of the device, regardless of sector protection settings

• Temperature range/grade

- Industrial (–40°C to +85°C)

- Industrial Plus (–40°C to +105°C)

- Automotive, AEC-Q100 grade 3 (–40°C to +85°C)

- Automotive, AEC-Q100 grade 2 (–40°C to +105°C)

• 100,000 program-erase cycles

• 20-year data retention

• Packaging options

- 64-ball LSH fortified BGA, 13 mm × 11 mm