Features

• 45-nm MIRRORBIT™ technology

• Single supply (VCC) for read / program / erase (2.7 V to 3.6 V)

• Versatile I/O feature

- Wide I/O voltage range (VIO): 1.65 V to VCC

• ×8/×16 data bus

• Asynchronous 32-byte page read

• 512-byte programming buffer

- Programming in page multiples, up to a maximum of 512 bytes

• Single word and multiple program on same word options

• Automatic error checking and correction (ECC) — internal hardware ECC with single bit error correction

• Sector erase

- Uniform 128-KB sectors

• Suspend and Resume commands for program and erase operations

• Status Register, Data Polling, and Ready/Busy pin methods to determine device status

• Advanced sector protection (ASP)

- Volatile and non-volatile protection methods for each sector

• Separate 2048-byte one-time program (OTP) array

- Four lockable regions (SSR0–SSR3)

- SSR0 is factory locked

- SSR3 is password read protect

• Common flash interface (CFI) parameter table

• Temperature range / grade

- Industrial (–40°C to +85°C)

- Industrial Plus (–40°C to +105°C)

- Extended (–40°C to +125°C)

- Automotive, AEC-Q100 grade 3 (–40°C to +85°C)

- Automotive, AEC-Q100 grade 2 (–40°C to +105°C)

• 100,000 program/erase cycles

• 20-year data retention