Distinctive characteristics

• CMOS 3.0 V core with versatile I/O

• 65 nm MIRRORBIT™ Eclipse technology

• Single supply (VCC) for read / program / erase (2.7 V to 3.6 V)

• Versatile I/O feature

- Wide I/O voltage range (VIO): 1.65 V to VCC

• ×16 data bus

• Asynchronous 32-byte page read

• 512-byte programming buffer

- Programming in page multiples, up to a maximum of 512 bytes

• Single word and multiple program on same word options

• Automatic error checking and correction (ECC) – internal hardware ECC with single bit error correction

• Sector erase

- Uniform 128-kbyte sectors

• Suspend and resume commands for program and erase operations

• Status register, data polling, and ready/busy pin methods to determine device status

• Advanced sector protection (ASP)

- Volatile and non-volatile protection methods for each sector

• Separate 1024-byte one time program (OTP) array with two lockable regions

• Common flash interface (CFI) parameter table

• Temperature range / grade

- Industrial (–40°C to +85°C)

- Industrial plus(–40°C to +105°C)

- Automotive, AEC-Q100 grade 3 (–40°C to +85°C)

- Automotive, AEC-Q100 grade 2 (–40°C to +105°C)

• 100,000 program / erase cycles

• 20 years data retention

• Packaging options

- 56-pin TSOP

- 64-ball LAA Fortified BGA, 13 mm × 11 mm

- 64-ball LAE Fortified BGA, 9 mm × 9 mm

- 56-ball VBU Fortified BGA, 9 mm × 7 mm