Distinctive Characteristics

 65 nm MirrorBit Eclipse Technology

 Single supply (VCC) for read / program / erase (2.7V to 3.6V)

 Versatile I/O Feature

– Wide I/O voltage range (VIO): 1.65V to VCC

 x16 data bus

 Asynchronous 32-byte Page read

 512-byte Programming Buffer

– Programming in Page multiples, up to a maximum of 512 bytes

 Single word and multiple program on same word options

 Sector Erase

– Uniform 128-kbyte sectors

 Suspend and Resume commands for Program and Erase

operations

 Status Register, Data Polling, and Ready/Busy pin methods

to determine device status

 Advanced Sector Protection (ASP)

– Volatile and non-volatile protection methods for each sector

 Separate 1024-byte One Time Program (OTP) array with two

lockable regions

 Common Flash Interface (CFI) parameter table

 Temperature Range

– Industrial (-40°C to +85°C)

– In-Cabin (-40°C to +105°C)

 100,000 erase cycles for any sector typical

 20-year data retention typical

 Packaging Options

– 56-pin TSOP

– 64-ball LAA Fortified BGA, 13 mm x 11 mm

– 64-ball LAE Fortified BGA, 9 mm x 9 mm

– 56-ball VBU Fortified BGA, 9 mm x 7 mm