Features

• Infineon 45-nm MIRRORBIT™ technology that stores two data bits in each memory array cell

• Sector architecture options

- Uniform: Address space consists of all 256KB sectors

- Hybrid

• Configuration 1: Address space consists of thirty-two 4KB sectors grouped either on the top or the bottom

while the remaining sectors are all 256KB

• Configuration 2: Address space consists of thirty-two 4KB sectors equally split between top and bottom

while the remaining sectors are all 256KB

• Page Programming buffer of 256 or 512 bytes

• OTP secure silicon region (SSR) of 1024 bytes (32 × 32 bytes)

• HYPERBUS™ interface

- JEDEC eXpanded SPI (JESD251) compatible

- DDR option runs up to 400-MBps (200 MHz clock speed)

- Supports data strobe (DS) to simplify the read data capture in high-speed systems

• Legacy (x1) SPI (1S-1S-1S)

- JEDEC eXpanded SPI (JESD251) compatible

- SDR option runs up to 21-MBps (166 MHz clock speed)

• SEMPER™ Flash with HYPERBUS™ interface devices support default boot in legacy SPI (x1) or HYPERBUS™

interface (x8)

• Functional safety features

- Functional safety ISO26262 ASIL B compliant and ASIL D ready

- Infineon Endurance Flex architecture provides high-endurance and long retention partitions

- Interface CRC detects errors on communication interface between host controller and SEMPER™ Flash device

- Data integrity CRC detects errors in memory array

- SafeBoot reports device initialization failures, detects configuration corruption, and provides recovery

options

- Built-in error correcting code (ECC) corrects Single-bit Error and detects Double-bit Error (SECDED) on memory

array data

- Sector erase status indicator for power loss during erase

• Protection features

- Advanced sector protection for individual memory array sector based protection

• AutoBoot enables immediate access to the memory array following power-on

• Hardware reset through CS# signaling method (JEDEC) AND individual RESET# pin

• Serial flash discoverable parameters (SFDP) describing device functions and features

• Device identification, manufacturer identification and unique identification

• Data integrity

- 256Mb devices

• Minimum 640,000 program-erase cycles for the main array

- 512Mb devices

• Minimum 1,280,000 program-erase cycles for the main array

- 1Gb devices

• Minimum 2,560,000 program-erase cycles for the main array

• All devices

- Minimum 300,000 program-erase cycles for the 4KB sectors

- Minimum 25 years data retention

• Supply voltage

- 1.7V to 2.0V (HS-T)

- 2.7V to 3.6V (HL-T)

• Grade / temperature range

- Industrial (–40°C to +85°C)

- Industrial plus (–40°C to +105°C)

- Automotive AEC-Q100 grade 3 (–40°C to +85°C)

- Automotive AEC-Q100 grade 2 (–40°C to +105°C)

- Automotive AEC-Q100 grade 1 (–40°C to +125°C)

• Packages

- 256Mb and 512Mb: 24-ball BGA 6 × 8 mm

- 1Gb: 24-ball BGA 8 × 8 mm