位置:S25FL512SAGBHVC10 > S25FL512SAGBHVC10详情

S25FL512SAGBHVC10中文资料

厂家型号

S25FL512SAGBHVC10

文件大小

3749.95Kbytes

页面数量

167

功能描述

512 Mb (64 MB) FL-S Flash

数据手册

原厂下载下载地址一下载地址二到原厂下载

生产厂商

INFINEON

S25FL512SAGBHVC10数据手册规格书PDF详情

Features

• CMOS 3.0 V Core with versatile I/O

• SPI with Multi-I/O

• Density

- 512 Mb (64 MB)

• SPI

- SPI Clock polarity and phase modes 0 and 3

- DDR option

- Extended Addressing: 32-bit address

- Serial Command set and footprint compatible with S25FL-A, S25FL-K, and S25FL-P SPI families

- Multi I/O Command set and footprint compatible with the S25FL-P SPI family

• READ Commands

- Normal, Fast, Dual, Quad, Fast DDR, Dual DDR, Quad DDR

- AutoBoot - power up or reset and execute a Normal or Quad read command automatically at a preselected address

- Common Flash Interface (CFI) data for configuration information.

• Programming (1.5 MBps)

- 512-byte Page Programming buffer

- Quad-Input Page Programming (QPP) for slow clock systems

- Automatic ECC -internal hardware Error Correction Code generation with single bit error correction

• Erase (0.5 to 0.65 MBps)

- Uniform 256-KB sectors

• Cycling Endurance

- 100,000 Program-Erase Cycles, minimum

• Data Retention

- 20-Year Data Retention, minimum

• Security Features

- OTP array of 1024 bytes

- Block Protection:

• Status Register bits to control protection against program or erase of a contiguous range of sectors.

• Hardware and software control options

- Advanced Sector Protection (ASP)

• Individual sector protection controlled by boot code or password

• Infineon 65 nm MIRRORBIT™ Technology with Eclipse™ Architecture

• Core supply voltage: 2.7 V to 3.6 V

• I/O supply voltage: 1.65 V to 3.6 V

- SO16 and FBGA packages

更新时间:2025-10-18 16:10:00
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