位置:Q67060-S6120 > Q67060-S6120详情

Q67060-S6120中文资料

厂家型号

Q67060-S6120

文件大小

458.39Kbytes

页面数量

19

功能描述

Smart High-Side Power Switch 1 Channel: 1 x 200m?

Smart High-Side Power Switch 1

数据手册

下载地址一下载地址二到原厂下载

生产厂商

INFINEON

Q67060-S6120数据手册规格书PDF详情

General Description

N channel vertical power MOSFET with charge pump ground referenced CMOS compatible input, monolithically integrated in Smart SIPMOS technology.

Fully protected by embedded protection functions.

Features

• Short-circuit protection

• Current limitation

• Overload protection

• Overvoltage protection (including load dump)

• Undervoltage shutdown with autorestart and hysteresis

• Switching inductive loads

• Clamp of negative voltage at output with inductive loads

• Thermal shutdown with restart

• ESD - Protection

• Loss of GND and loss of V bb protection

• Reverse battery protection with external resistor

• Improved electromagnetic compatibility (EMC)

Application

• All types of resistive, inductive and capacitive loads

• Current controlled power switch for 12 V and 24 V DC applications

• Replaces electromechanical relays and discrete circuits

Q67060-S6120产品属性

  • 类型

    描述

  • 型号

    Q67060-S6120

  • 制造商

    INFINEON

  • 制造商全称

    Infineon Technologies AG

  • 功能描述

    Smart High-Side Power Switch 1

  • Channel

    1 x 200mз

更新时间:2026-2-28 15:01:00
供应商 型号 品牌 批号 封装 库存 备注 价格
INFINEON
23+
8000
只做原装现货
INFINEON
25+
N/A
12515
原装现货17377264928微信同号
INFINEON/英飞凌
2447
NA
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货