Description

The PTF191601E and PTF191601F are 160-watt, internally-matched GOLDMOS FETs intended for GSM EDGE and CDMA applications in the 1930 to 1990 MHz band. Thermally-enhanced packaging provides the coolest operation available. Full gold metallization ensures excellent device lifetime and reliability.

Features

• Thermally-enhanced packaging

• Broadband internal matching

• Typical EDGE performance

- Average output power = 80 W

- Gain = 14 dB

- Efficiency = 35

- EVM = 2.5

• Typical CW performance

- Output power at P–1dB = 180 W

- Gain = 13 dB

- Efficiency = 47

• Integrated ESD protection: Human Body

Model, Class 1 (minimum)

• Excellent thermal stability

• Low HCI drift

• Capable of handling 10:1 VSWR @ 28 V,

160 W (CW) output power