Description

The PTF180101M is an unmatched 10-watt GOLDMOS® FET intended for class AB base station applications in the 1 to 2 GHz band. This LDMOS device offers excellent gain, efficiency and linearity performance in a small footprint.

Features

• Typical EDGE performance

- Average output power = 4.0 W

- Gain = 17 dB

- Efficiency = 31

- EVM = 1.3

• Typical CW performance

- Output Power at P–1dB = 10 W

- Gain = 16 dB

- Efficiency = 50

• Integrated ESD protection:

Human Body Model Class 1 (minimum)

• Excellent thermal stability

• Low HCI drift

• Capable of handling 10:1 VSWR @ 28 V,

10 W (CW) output power

• Pb-free and RoHS compliant