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The latest 800V CoolMOS™ P7 series sets a new benchmark in 800V

super junction technologies and combines best-in-class performance with

state of the art ease-of-use, resulting from Infineon’s over 18 years

pioneering super junction technology innovation.

Features

• Best-in-class FOM RDS(on) * Eoss; reduced Qg, Ciss, and Coss

• Best-in-class DPAK RDS(on)

• Best-in-class V(GS)th of 3V and smallest V(GS)th variation of ±0.5V

• Integrated Zener Diode ESD protection

• Fully optimized portfolio

Benefits

• Best-in-class performance

• Enabling higher power density designs, BOM savings and lower

assembly costs

• Easy to drive and to parallel

• Better production yield by reducing ESD related failures

• Less production issues and reduced field returns

• Easy to select right parts for fine tuning of designs

Potential applications

Recommended for hard and soft switching flyback topologies for low

power Chargers and Adapters.

Product validation

Fully qualified according to JEDEC for Industrial Applications

Please note: The source and sense source pins are not exchangeable.

Their exchange might lead to malfunction. For paralleling 4pin MOSFET

devices the placement of the gate resistor is generally recommended to be

on the Driver Source instead of the Gate.