位置:IMW65R033M2H > IMW65R033M2H详情

IMW65R033M2H中文资料

厂家型号

IMW65R033M2H

文件大小

1145.78Kbytes

页面数量

17

功能描述

SiC MOSFET CoolSiC™ MOSFET 650 V G2

数据手册

下载地址一下载地址二到原厂下载

生产厂商

INFINEON

IMW65R033M2H数据手册规格书PDF详情

Features

• Ultra‑low switching losses

• Benchmark gate threshold voltage, VGS(th) = 4.5 V

• Robust against parasitic turn‑on even with 0 V turn‑off gate voltage

• Flexible driving voltage and compatible with bipolar driving scheme

• Robust body diode operation under hard commutation events

• .XT interconnection technology for best‑in‑class thermal performance

Benefits

• Enables high efficiency and high power density designs

• Facilitates great ease of use and integration

•Provides the best price performance ratio compared to Industry’s most

ambitious roadmaps

• Reduces the size, weight and bill of materials of the systems

• Enhances system robustness and reliability

Potential applications

• SMPS

• Solar PV inverters

• Energy storage and battery formation

• UPS

• EV charging infrastructure

• Motor drives

更新时间:2025-10-14 16:10:00
供应商 型号 品牌 批号 封装 库存 备注 价格
Infineon
24+
PG-TO247-3
9000
只做原装正品 有挂有货 假一赔十
INFINEON
24+
con
35960
查现货到京北通宇商城
INFINEON
24+
n/a
25836
新到现货,只做原装进口
Infineon
23+
PG-TO247-3
15500
英飞凌优势渠道全系列在售
INFINEON
24+
con
35960
查现货到京北通宇商城
INFINEON
24+
con
10000
查现货到京北通宇商城
Infineon/英飞凌
24+
PG-TO247-3
8000
只做原装,欢迎询价,量大价优
Infineon/英飞凌
2025+
PG-TO247-3
8000
Infineon(英飞凌)
23+
TO-247-3
10000
只做全新原装,实单来
Infineon(英飞凌)
25+
TO-247-3
500000
源自原厂成本,高价回收工厂呆滞