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IMBG65R009M1H中文资料

厂家型号

IMBG65R009M1H

文件大小

1375.79Kbytes

页面数量

16

功能描述

CoolSiC™ M1 CoolSiC™ MOSFET 650 V G1

数据手册

下载地址一下载地址二到原厂下载

生产厂商

INFINEON

IMBG65R009M1H数据手册规格书PDF详情

Features

• Optimized switching behavior at higher currents

• Commutation robust fast body diode with low Qfr

• Superior gate oxide reliability

• Tj,max=175°C and excellent thermal behavior

• Lower RDS(on) and pulse current dependency on temperature

• Increased avalanche capability

• Compatible with standard drivers

• Kelvin source provides up to 4 times lower switching losses

Benefits

• Unique combination of high performance, high reliability and ease of use

• Ease of use and integration

• Suitable for topologies with continuous hard commutation

• Higher robustness and system reliability

• Efficiency improvement

• Reduced system size leading to higher power density

更新时间:2025-12-10 11:14:00
供应商 型号 品牌 批号 封装 库存 备注 价格
Infineon/英飞凌
25+
原厂封装
10280
原厂授权代理,专注军工、汽车、医疗、工业、新能源!
Infineon
23+
PG-TO263-7
15500
英飞凌优势渠道全系列在售
INFINEON
23+
K-B
1010
只有原装,请来电咨询
Infineon
24+
PG-TO263-7
9000
只做原装正品 有挂有货 假一赔十
INFINEON
2423
con
10
现货常备产品原装可到京北通宇商城查价格
INFINEON
25+
原封装
81220
郑重承诺只做原装进口货
INFINEON
24+
n/a
25836
新到现货,只做原装进口
INFINEON
2
Infineon Technologies
23+
SMD
3652
原厂正品现货供应SIC全系列
Infineon(英飞凌)
24+
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!