Features

• VCE = 670 V

• IC = 40 A

• Pin-to-pin creepage distance > 4.8 mm

• Pin-to-pin clearance distance > 3.4 mm

• Optimized monolithic diode for PFC applications

• Improved EMI behavior with lower dv/dt

• Very low VCEsat = 1.4 V (typ.) at 25°C

• Stable temperature behavior

• Low temperature dependence of VCEsat and Esw

• 2 kV ESD HBM compliant

• Easy parallel switching capability based on positive temperature coefficient of VCEsat

• Product spectrum and PSpice Models: http://www.infineon.com/igbt/