Features

• VCE = 1200 V

• IC = 120 A

• IGBT co-packed with full current, soft and low Qrr diode

• Low saturation voltage VCEsat = 2.0 V at Tvj = 175°C

• Optimized for hard switching topologies (2-L inverter, 3-L NPC T-type, ...)

• Short circuit ruggedness 8 μs

• Wide range of dv/dt controllability

• Complete product spectrum and PSpice Models: http://www.infineon.com/igbt/

Potential applications

• Industrial drives

• Industrial power supplies

• Solar inverters