位置:IHW30N135R3_V01 > IHW30N135R3_V01详情

IHW30N135R3_V01中文资料

厂家型号

IHW30N135R3_V01

文件大小

1720.64Kbytes

页面数量

16

功能描述

Reverse conducting IGBT with monolithic body diode

数据手册

下载地址一下载地址二到原厂下载

生产厂商

INFINEON

IHW30N135R3_V01数据手册规格书PDF详情

Features:

• Offers new higher breakdown voltage to 1350V for improved

reliability

• Powerful monolithic body diode with low forward voltage

designed for soft commutation only

• TRENCHSTOPTM technology offering:

- very tight parameter distribution

- high ruggedness, temperature stable behavior

- low VCEsat

- easy parallel switching capability due to positive

temperature coefficient in VCEsat

• Low EMI

• Qualified according to JESD-022 for target applications

• Pb-free lead plating; RoHS compliant

• Halogen free (according to IEC 61249-2-21)

• Complete product spectrum and PSpice Models:

http://www.infineon.com/igbt/

Applications:

• Inductive cooking

• Inverterized microwave ovens

• Resonant converters

• Soft switching applications

更新时间:2021-9-14 10:50:00
供应商 型号 品牌 批号 封装 库存 备注 价格
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