Features

• Two 200 m GaN switches in half-bridge configuration with dedicated high- and

low-side isolated gate drivers

Source

/ sink driving current up to 1 / 2 A

Application-

configurable turn-on and turn-off speed

• Fast input-to-output propagation (typ. 47 ns) with extremely small channel-tochannel

mismatch

• PWM input signal (switching frequency up to 3 MHz)

• Standard logic input levels compatible with digital controllers

• Wide supply range

• Single gate driver supply voltage possible (typ. 8 V) with fast UVLO recovery

• Low-side open source for current sensing with external shunt resistor

• Galvanic input-to-output isolation based on robust coreless transformer technology

• Gate driver with very high common mode transient immunity (CMTI) > 300 V/ns

• Thermally enhanced 8 x 8 mm QFN-28 package

• Product is fully qualified acc. to JEDEC for Industrial Applications

Description

IGI60F2020A1L combines a half-bridge power stage consisting of two 200 m (typ. Rdson) / 600 V enhancementmode

CoolGaNTM HEMTs with dedicated gate drivers in a small 8 x 8 mm QFN-28 package. In the low-to-medium

power area (example application in Figure 1) it is thus ideally suited to support the design of high-density AC/DC

chargers and adapters utilizing the superior switching behavior of CoolGaNTM HEMTs.

Infineon’s CoolGaNTM and related power switches provide a very robust gate structure. When driven by a continuous

gate current of a few mA in the “on” state, a minimum on-resistance Rdson is always guaranteed.

Applications

• Charger and adaptors

• Server, telecom & networking SMPS

• Low power motor drive

• LED lighting