1 Description

ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC

Schottky Barrier diodes. Thanks to the more compact design and thin-wafer

technology, the new family of products shows improved efficiency over all load

conditions, resulting from both the improved thermal characteristics and a lower

figure of merit (Qc x Vf).

The new thinQ!™ Generation 5 has been designed to complement our 650V

CoolMOS™ families: this ensures meeting the most stringent application

requirements in this voltage range.

Features

 Revolutionary semiconductor material - Silicon Carbide

 Benchmark switching behavior

 No reverse recovery/ No forward recovery

 Temperature independent switching behavior

 High surge current capability

 Pb-free lead plating; RoHS compliant

 Qualified according to JEDEC1) for target applications

 Breakdown voltage tested at 88 mA2)

 Optimized for high temperature operation

Benefits

 System efficiency improvement over Si diodes

 System cost / size savings due to reduced cooling requirements

 Enabling higher frequency / increased power density solutions

 Higher system reliability due to lower operating temperatures

 Reduced EMI