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IDK09G65C5中文资料

厂家型号

IDK09G65C5

文件大小

417.84Kbytes

页面数量

2

功能描述

650V SiC thinQ!??Generation 5 diodes

数据手册

原厂下载下载地址一下载地址二到原厂下载

生产厂商

INFINEON

IDK09G65C5数据手册规格书PDF详情

Features

■ V₂ at 650V

Improved Figure of Merit (Q x V)

■ No reverse recovery charge

■ Soft switching reverse

recovery waveform

■ Temperature independent

switching behavior

High operating temperature

(₁175°C)

■ Improved surge capability

■ Pb-free lead plating

☐10 years manufacturing of SIC diodes

Benefits

■ Higher safety margin against

Overvoltage; best match with

CoolMOS™ 650V products

Improved efficiency over all

load conditions

■ Increased efficiency compared to

Silicon Diode alternatives

■ Reduced EMI compared to snappier

Silicon diode reverse recovery

waveform

Highly stable switching performance

Reduced cooling requirements

■ Reduced risks of thermal runaway

■ RoHS compliant

High quality know-how and capacity

in SiC diode manufacture

更新时间:2025-10-10 9:24:00
供应商 型号 品牌 批号 封装 库存 备注 价格
INFINEON/英飞凌
24+
TO263-2
2894
只做原厂渠道 可追溯货源
INFINEON
21+
TO263-2
10000
原装现货假一罚十
INFINEON
25+
TO-263
6000
原厂原装,价格优势
INFINEON
24+
con
35960
查现货到京北通宇商城
INFINEON
24+
con
35960
查现货到京北通宇商城
INFINEON/英飞凌
24+
TO263-2
60000
全新原装现货
Infineon/英飞凌
24+
PG-TO263-2
8000
只做原装,欢迎询价,量大价优
Infineon/英飞凌
25+
原厂封装
10280
原厂授权代理,专注军工、汽车、医疗、工业、新能源!
Infineon/英飞凌
2025+
PG-TO263-2
8000
Infineon/英飞凌
25
PG-TO263-2
6000
原装正品