Features

• Revolutionary semiconductor material - Silicon Carbide

• Switching behavior benchmark

• No reverse recovery / No forward recovery

• Temperature independent switching behavior

• High surge current capability

• Pb-free lead plating; RoHS compliant

• Qualified according to JEDEC1) for target applications

• Breakdown voltage tested at 20mA2)

• Optimized for high temperature operation

• Lowest Figure of Merit QC/IF

thinQ! 3G Diode designed for fast switching applications like:

• SMPS e.g.; CCM PFC

• Motor Drives; Solar Applications; UPS