Features

• Electrical features

- VDSS = 1200 V

- ID,nom = 200 A

- New semiconductor material - silicon carbide

- Blocking voltage 1200 V

- Low RDS,on

- Low switching losses

- Low Qg and Crss

- Tvj,op = 150°C

- Low inductive design <10 nH

• Mechanical features

- 4.2 kV DC 1 second insulation

- High creepage and clearance distances

- Compact design

- High power density

- Direct-cooled PinFin base plate

- High-performance Si3N4 ceramic

- Guiding elements for PCB and cooler assembly

- Integrated NTC temperature sensor

- PressFIT contact technology

- RoHS compliant

- UL 94 V0 module frame