Features

• Electrical features

- VDSS = 1200 V

- IDN = 190 A / IDRM = 380 A

- Low inductive design ≤ 8 nH

- Low RDS,on

- Low switching losses

- Low Qg and Crss

- New semiconductor material - silicon carbide

- Tvj,op = 175°C

• Mechanical features

- 4.25 kV DC 1 second insulation

- Compact design

- High power density

- AlN Substrate with low thermal resistance

- Integrated NTC temperature sensor

- RoHS compliant

- UL 94 V0 module frame

Potential applications

• Automotive applications

• (Hybrid) electrical vehicles (H)EV

• Motor drives