位置:EVAL_1ED020I12-B2 > EVAL_1ED020I12-B2详情

EVAL_1ED020I12-B2中文资料

厂家型号

EVAL_1ED020I12-B2

文件大小

1073.11Kbytes

页面数量

20

功能描述

High voltage gate driver IC

数据手册

下载地址一下载地址二到原厂下载

生产厂商

INFINEON

EVAL_1ED020I12-B2数据手册规格书PDF详情

The EVAL_1ED020I12-B2 contains two IGBT gate drivers 1ED020I12-B2 in a half bridge

configuration and an IGBT module FS25R12W1T4_B11 where only two IGBTs are connected.

The evaluation board provides the following main features

 Galvanic isolation by the coreless transformer technology of the Infineon gate driver. The gate

1ED020I12-B2 is suitable for basic isolation

 Isolation inside the half bridge by defined creepage

 Short circuit protection

 Under voltage lock out

 Active miller clamp

 Bootstrap functionality for high side IGBT

 Connector for 5V digital supply, 15V supply, Reset, High voltage supply, external load

 Status LED for 5V supply, 15V supply, ready and fault separated for high- and lowside driver

 DC link capacitor

更新时间:2025-10-8 11:01:00
供应商 型号 品牌 批号 封装 库存 备注 价格
INFINEON
23+
8000
只做原装现货
INFINEON
23+
GOOP
7000