1 Description

Features

 Revolutionary semiconductor material - Silicon Carbide

 Benchmark switching behavior

 No reverse recovery/ No forward recovery

 Temperature independent switching behavior

 High surge current capability

 Pb-free lead plating; RoHS compliant

 Qualified according to JEDEC1) for target applications

 Breakdown voltage tested at 22 mA2)

 Optimized for high temperature operation

Benefits

 System efficiency improvement over Si diodes

 System cost / size savings due to reduced cooling requirements

 Enabling higher frequency / increased power density solutions

 Higher system reliability due to lower operating temperatures

 Reduced EMI

Applications

 Switch mode power supply

 Power factor correction

 Solar inverter

 Uninterruptible power supply

ThinQ!™ Generation 5 represents Infineon leading edge technology for the

SiC Schottky Barrier diodes. Thanks to the more compact design and thinwafer

technology, the new family of products shows improved efficiency over

all load conditions, resulting from both the improved thermal characteristics

and a lower figure of merit (Qc x Vf).

The new thinQ!™ Generation 5 has been designed to complement our 650V

CoolMOS™ families: this ensures meeting the most stringent application

requirements in this voltage range.