Features

• 1-Mbit ferroelectric random access memory (F-RAM) logically organized as (64K × 16) or (128K × 8)

- High-endurance 10 trillion (1013) reads/writes

- 121 year data retention (see “Data retention and endurance” on page 13)

- Infineon instant non-volatile write technology

- Page-mode operation for 30 ns cycle time

- Advanced high-reliability ferroelectric process

• SRAM compatible

- Industry-standard (64K × 16)/(128K × 8) SRAM pinout

• 60 ns access time, 90 ns cycle time

• Advanced features

- Software-programmable block write-protect

• Low power consumption (pre/post 150 krad TID radiation)

• 20 mA/20 mA active current at 25 MHz

• 700 μA/5 mA standby current

• 20 μA/8 mA sleep mode current

• Low-voltage operation: VDD = 2.0 V to 3.6 V

• Military temperature: –55°C to +125°C

• 44-pin ceramic TSOP package