General Description

N channel vertical power FET with charge pump, ground referenced CMOS compatible input, monolithically integrated in Smart SIPMOS® technology. Fully protected by embedded protection functions.

• High-side switch

• Short-circuit protection

• Input protection

• Overtemperature protection with hysteresis

• Overload protection

• Overvoltage protection

• Switching inductive load

• Clamp of negative output voltage with inductive loads

• Undervoltage shutdown

• Maximum current internally limited

• Electrostatic discharge (ESD) protection

• Reverse battery protection1)

Application

• µC compatible power switch for 12 V DC grounded loads

• All types of resistive, inductive and capacitive loads

• Replaces electromechanical relays and discrete circuits