Description

The BGSX22G6U10 RF CMOS switch is specifically designed for GSM, WCDMA, LTE and 5G applications. This DPDT oers low

insertion loss even at high frequencies of up to 7.125 GHz, low harmonic generation along with high isolation between RF ports.

In addition, the fast switching speed enables 5G-SRS applications.

The switch is controlled via a GPIO interface. The on-chip controller allows power-supply voltages from 1.6V to 3.6V.

The switch features direct-connect-to-battery functionality and DC-free RF ports. Unlike GaAs technology, external DC blocking

capacitors at the RF Ports are only required if DC voltage is applied externally. The device has a very small size of only 1.1mm x

1.5mm and a thickness of 0.60mm.

Features

 High linearity up to 39 dBm peak power

 Low current consumption

 Low insertion loss and high port to port isolation up to 7.125 GHz

 Fast switching speed to enable 5G-SRS applications

 General Purpose Input-Output (GPIO) Interface

 No decoupling capacitors required for typical applications

 Ultra low profile lead-less plastic package (MSL-1, 260 C per IPC/JEDEC

J-STD-20)

 RoHS and WEEE compliant package

Small form factor 1.1mm x 1.5mm