1 Features

• Insertion power gain: 17.8 dB

• Low noise figure: 0.60 dB

• Low current consumption: 4.8mA

• High linearity performance IIP3: 0 dBm

• Operating frequencies: 1164 - 1300 MHz

• Supply voltage: 1.1 V to 3.3 V

• Ultra small TSNP-6-10 leadless package (footprint: 0.7 x 1.1 mm2)

• B9HF Silicon Germanium technology

• RF output internally matched to 50 Ohm

• Only one external matching component needed

• 2kV HBM ESD protection (including AI-pin)

• Pb-free (RoHS compliant) package

• Specifically designed for:

- L2/L5 GPS Signals

- E5a/E5b/E6 Galileo Signals

- G2/G3 Glonass Signals

- B2/B3 Beidou Signals

Description

The BGA855N6 is a front-end low noise amplifier for GPS L5 and L2, Galileo E5a, E5b, E6, Glonass G3, G2 and

Beidou B3 and B2 bands for a frequency range from 1164 MHz to 1300 MHz. The LNA provides 17.8 dB gain and

0.60 dB noise figure at a current consumption of 4.8mA in the application configuration described in Chapter 4.

The BGA855N6 is based upon Infineon Technologies‘ B9HF Silicon Germanium technology. It operates from 1.1 V

to 3.3 V supply voltage (device optimized for 1.8V operation / also prepared to support 1.2V and 2.8V operation).

OFF-state can be enabled by PON pin.