Low Noise Silicon Bipolar RF Transistor

• For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA

• fT = 8 GHz, NFmin = 0.9 dB at 900 MHz

• Two (galvanic) internal isolated Transistor in one package

• For orientation in reel see package information below

• Pb-free (RoHS compliant) and halogen-free package with visible leads

• Qualification report according to AEC-Q101 available