Linear Low Noise SiGe:C Bipolar RF Transistor

• For medium power amplifiers and driver stages

• Based on Infineon s reliable high volume Silicon

Germanium technology

• High OIP3 and P-1dB

• Ideal for low phase noise oscilators

• Maxim. available Gain G

ma = 21.5 dB at 1.8 GHz

Minimun noise figure NFmin = 0.8 dB at 1.8 GHz

• Pb-free (RoHS compliant) and halogen-free thin small

flat package with visible leads

• Qualification report according to AEC-Q101 available