Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications

Features

 • Advanced Process Technology

 • Ultra Low On-Resistance

 • 175°C Operating Temperature

 • Fast Switching

 • Repetitive Avalanche Allowed up to Tjmax

 • Lead-Free, RoHS Compliant

 • Automotive Qualified *