3.1 Key Features

 BGT60 covers the V-Band frequency range from 57 to 64 GHz

 Fabricated with Infineon’s advanced Silicon-Germanium (SiGe) technology

 Housed in Infineon’s Embedded Wafer Level Ball-Grid Array (eWLB) Package

 BGT60 can be programmed via SPI interface to work either in transmit (TX) or/and receive (RX) mode

 Zero IF – differential I/Q interface – direct conversion architecture

 Differential RF transmit output signaling

 Differential RF receive input signaling

 Differential intermediate frequency I/Q signaling

 Peak detector at VGA input at transmit path

 Peak detector at PA output at transmit path

 Built-in temperature sensor

 SPI interface

 ESD protected device

 BITE (Built-In-Test Equipment) for self-test and calibration in production at Infineon to verify RF performance

 Can support TDD or FDD systems