Features

• VCE = 750 V

• IC = 200 A

• Best-in-class highest power density, IC = 200 A

• 750 V collector-emitter blocking voltage capability

• Suitable for 470 V VDC systems and increase overvoltage margin for 400 V VDC systems

• Very low VCE(sat), 1.30 V at ICnom = 200 A, 25°C

• Short circuit robust tsc = 5 μs at VCE = 470 V, VGE = 15 V

• Self limiting current under short circuit condition

• Positive thermal coefficient and very tight parameter distribution for easy paralleling

• A Reduced number of parallel devices is required due to Inom = 200 A

• Excellent current sharing in parallel operation

• Smooth switching characteristics, low EMI signature

• Low gate charge QG

• Simple gate drive design

• Co-packed with fast soft recovery emitter controlled 3 diode

• TO247PLUS package with high creepage distance

• High reliability