位置:8KS2564GAHB04 > 8KS2564GAHB04详情

8KS2564GAHB04中文资料

厂家型号

8KS2564GAHB04

文件大小

1037.96Kbytes

页面数量

48

功能描述

256 Mb HYPERRAM™ self-refresh DRAM (PSRAM)

数据手册

下载地址一下载地址二到原厂下载

生产厂商

INFINEON

8KS2564GAHB04数据手册规格书PDF详情

Features

• Interface

- HYPERBUS™ extended-IO

- 1.7 to 2.0 V (1.8 typ.) interface support

• Single-ended clock (CK) - 20 bus signals

• Optional differential clock (CK, CK#) - 21 bus signals

- Chip Select (CS#)

- 16-bit data bus (DQ[15:0])

- Hardware reset (RESET#)

- Bidirectional read-write data strobe (RWDS [1:0])

• Output at the start of all transactions to indicate refresh latency

• Output during read transactions as read data strobe

• Input during write transactions as write data mask

• Performance, power, and packages

- 200 MHz maximum clock rate

- DDR - transfers data on both edges of the clock

- Data throughput up to 800 MBps (6,400 Mbps)

- Configurable burst characteristics

• Linear burst

• Wrapped burst lengths:

16 words (8 clocks)

32 words (16 clocks)

64 words (32 clocks)

128 words (64 clocks)

• Hybrid option - one wrapped burst followed by linear burst

- Configurable output drive strength

- Power modes

• Hybrid Sleep mode

• Deep Power Down

- Memory array refresh

• Partial array (1/8, 1/4, 1/2, and so on)

• Full array

- Package

• 49-ball FBGA

- Operating temperature range

• Automotive, AEC-Q100 Grade 3: –40°C to +85°C

• Automotive, AEC-Q100 Grade 2: –40°C to +105°C

• Technology

- 25 nm DRAM

更新时间:2025-10-13 18:49:00
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