Features

• Optimized for driving GaN SG HEMTs and Si MOSFETs

• Fully diferential logic input circuitry to avoid false triggering

in low-side or high-side operation

• High common-mode input voltage range (CMR) up to ± 200 V

for high side operation

• High immunity to common-mode voltage transitions (100

V/ns) for robust operation during fast switching

• Compatible with 3.3 V or 5 V input logic

• Four driving strength variants to optimize switching speed

without external gate resistors - up to 2 A source/sink current

capability

• Active bootstrap clamp to avoid bootstrap capacitor

overcharging during dead-time

• Active Miller clamp with 5 A sink capability to avoid induced

turn-on

• Qualified for industrial applications according to the relevant

tests of JEDEC47/20/22

Description

The 1EDN71x6U is a single-channel gate-driver IC optimized for driving Infineon CoolGaN™ Schottky Gate

HEMTs, as well as other GaN SG HEMTs and Si MOSFETs. This gate driver includes several key features that

enable a high-performance system design with GaN SG HEMTs, including Truly Diferential Input, four driving

strength options, active Miller clamp, and bootstrap voltage clamp.