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IDT71V3559S75BG中文资料
IDT71V3559S75BG数据手册规格书PDF详情
Description
The IDT71V3557/59 are 3.3V high-speed 4,718,592-bit (4.5 Mega-bit) synchronous SRAMs organized as 128K x 36/256K x 18. They are designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus they have been given the name ZBTTM, or Zero Bus Turnaround.
Features
◆ 128K x 36, 256K x 18 memory configurations
◆ Supports high performance system speed - 100 MHz (7.5 ns Clock-to-Data Access)
◆ ZBTTM Feature - No dead cycles between write and read cycles
◆ Internally synchronized output buffer enable eliminates the need to control OE
◆ Single R/W (READ/WRITE) control pin
◆ 4-word burst capability (Interleaved or linear)
◆ Individual byte write (BW1 - BW4) control (May tie active)
◆ Three chip enables for simple depth expansion
◆ 3.3V power supply (±5), 3.3V (±5) I/O Supply (VDDQ)
◆ Optional Boundary Scan JTAG Interface (IEEE 1149.1 complaint)
◆ Packaged in a JEDEC Standard 100-pin plastic thin quad flatpack (TQFP), 119 ball grid array (BGA) and 165 fine pitch ball grid array (fBGA)
IDT71V3559S75BG产品属性
- 类型
描述
- 型号
IDT71V3559S75BG
- 功能描述
IC SRAM 4MBIT 75NS 119BGA
- RoHS
否
- 类别
集成电路(IC) >> 存储器
- 系列
-
- 标准包装
2,000
- 系列
MoBL® 格式 -
- 存储器
RAM
- 存储器类型
SRAM - 异步
- 存储容量
16M(2M x 8,1M x 16)
- 速度
45ns
- 接口
并联
- 电源电压
2.2 V ~ 3.6 V
- 工作温度
-40°C ~ 85°C
- 封装/外壳
48-VFBGA
- 供应商设备封装
48-VFBGA(6x8)
- 包装
带卷(TR)
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IDT |
23+ |
119-PBGA(14x22) |
71890 |
专业分销产品!原装正品!价格优势! |
|||
IDT |
1922+ |
BGA |
8200 |
莱克讯原厂货源每一片都来自原厂原装现货薄利多 |
|||
IDT |
22+ |
119PBGA (14x22) |
9000 |
原厂渠道,现货配单 |
|||
IDT |
24+ |
10 |
现货 |
||||
IDT |
23+ |
QFP |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
IDT |
23+ |
QFP100 |
8650 |
受权代理!全新原装现货特价热卖! |
|||
IDT |
25+ |
QFP-100 |
1001 |
就找我吧!--邀您体验愉快问购元件! |
|||
IDT |
23+ |
QFP100 |
50000 |
全新原装正品现货,支持订货 |
|||
IDT |
21+ |
QFP100 |
10000 |
原装现货假一罚十 |
|||
IDT |
24+ |
NA/ |
28 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
IDT71V3559S75BG 资料下载更多...
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IDT相关芯片制造商
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