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IDT70V659S10BFI中文资料

厂家型号

IDT70V659S10BFI

文件大小

194.05Kbytes

页面数量

23

功能描述

HIGH-SPEED 3.3V 128K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM

数据手册

下载地址一下载地址二到原厂下载

生产厂商

IDT

IDT70V659S10BFI数据手册规格书PDF详情

Description

The IDT70V659/58/57 is a high-speed 128/64/32K x 36 Asynchronous Dual-Port Static RAM. The IDT70V659/58/57 is designed to be used as a stand-alone 4/2/1Mbit Dual-Port RAM or as a combination MASTER/ SLAVE Dual-Port RAM for 72-bit-or-more word system. Using the IDT MASTERSLAVE Dual-Port RAM approach in 72-bit or wider memory system applications results in full-speed, error-free operation without the need for additional discrete logic.

Features

◆ True Dual-Port memory cells which allow simultaneous access of the same memory location

◆ High-speed access

– Commercial: 10/12/15ns (max.)

– Industrial: 12/15ns (max.)

◆ Dual chip enables allow for depth expansion without external logic

◆ IDT70V659/58/57 easily expands data bus width to 72 bits or more using the Master/Slave select when cascading more than one device

◆ M/S = VIH for BUSY output flag on Master, M/S = VIL for BUSY input on Slave

◆ Busy and Interrupt Flags

◆ On-chip port arbitration logic

◆ Full on-chip hardware support of semaphore signaling between ports

◆ Fully asynchronous operation from either port

◆ Separate byte controls for multiplexed bus and bus matching compatibility

◆ Supports JTAG features compliant to IEEE 1149.1

◆ LVTTL-compatible, single 3.3V (±150mV) power supply for core

◆ LVTTL-compatible, selectable 3.3V (±150mV)/2.5V (±100mV) power supply for I/Os and control signals on each port

◆ Available in a 208-pin Plastic Quad Flatpack, 208-ball fine pitch Ball Grid Array, and 256-ball Ball Grid Array

◆ Industrial temperature range (–40°C to +85°C) is available for selected speeds

更新时间:2025-11-22 14:17:00
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