位置:IDT70T653MS15BC > IDT70T653MS15BC详情

IDT70T653MS15BC中文资料

厂家型号

IDT70T653MS15BC

文件大小

309.44Kbytes

页面数量

24

功能描述

HIGH-SPEED 2.5V 512K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE

IC SRAM 18MBIT 15NS 256BGA

数据手册

下载地址一下载地址二到原厂下载

生产厂商

IDT

IDT70T653MS15BC数据手册规格书PDF详情

Description

The IDT70T653M is a high-speed 512K x 36 Asynchronous Dual-Port Static RAM. The IDT70T653M is designed to be used as a stand-alone 18874K-bit Dual-Port RAM. This device provides two independent ports with separate control, address, and I/O pins that permit independent, asynchronous access for reads or writes to any location in memory. An automatic power down feature controlled by the chip enables (eitherCE0 or CE1) permit the on-chip circuitry of each port to enter a very low standby power mode.

Features

◆ True Dual-Port memory cells which allow simultaneous access of the same memory location

◆ High-speed access

– Commercial: 10/12/15ns (max.)

– Industrial: 12ns (max.)

◆ RapidWrite Mode simplifies high-speed consecutive write cycles

◆ Dual chip enables allow for depth expansion without external logic

◆ IDT70T653M easily expands data bus width to 72 bits or more using the Busy Input when cascading more than one device

◆ Busy input for port contention management

◆ Interrupt Flags

◆ Full on-chip hardware support of semaphore signaling between ports

◆ Fully asynchronous operation from either port

◆ Separate byte controls for multiplexed bus and bus matching compatibility

◆ Sleep Mode Inputs on both ports

◆ Single 2.5V (±100mV) power supply for core

◆ LVTTL-compatible, selectable 3.3V (±150mV)/2.5V (±100mV) power supply for I/Os and control signals on each port

◆ Includes JTAG functionality

◆ Available in a 256-ball Ball Grid Array

◆ Industrial temperature range (–40°C to +85°C) is available for selected speeds

IDT70T653MS15BC产品属性

  • 类型

    描述

  • 型号

    IDT70T653MS15BC

  • 功能描述

    IC SRAM 18MBIT 15NS 256BGA

  • RoHS

  • 类别

    集成电路(IC) >> 存储器

  • 系列

    -

  • 标准包装

    3,000

  • 系列

    - 格式 -

  • 存储器

    EEPROMs - 串行

  • 存储器类型

    EEPROM

  • 存储容量

    8K(1K x 8)

  • 速度

    400kHz

  • 接口

    I²C,2 线串口

  • 电源电压

    1.7 V ~ 5.5 V

  • 工作温度

    -40°C ~ 85°C

  • 封装/外壳

    8-SOIC(0.154,3.90mm 宽)

  • 供应商设备封装

    8-SOIC

  • 包装

    带卷(TR)

更新时间:2026-3-4 16:31:00
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