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IDT70T631S10BFI中文资料

厂家型号

IDT70T631S10BFI

文件大小

342.05Kbytes

页面数量

27

功能描述

HIGH-SPEED 2.5V 512/256K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE

IC SRAM 4MBIT 10NS 208FBGA

数据手册

下载地址一下载地址二到原厂下载

生产厂商

IDT

IDT70T631S10BFI数据手册规格书PDF详情

Description

The IDT70T633/1 is a high-speed 512/256K x 18 Asynchronous Dual-Port Static RAM. The IDT70T633/1 is designed to be used as a stand-alone 9216/4608K-bit Dual-Port RAM or as a combination MASTER/SLAVE Dual-Port RAM for 36-bit-or-more word system. Using the IDT MASTER/SLAVE Dual-Port RAM approach in 36-bit or wider memory system applications results in full-speed, error-free operation without the need for additional discrete logic.

Features

◆ True Dual-Port memory cells which allow simultaneous access of the same memory location

◆ High-speed access

– Commercial: 8/10/12/15ns (max.)

– Industrial: 10/12ns (max.)

◆ RapidWrite Mode simplifies high-speed consecutive write cycles

◆ Dual chip enables allow for depth expansion without external logic

◆ IDT70T633/1 easily expands data bus width to 36 bits or more using the Master/Slave select when cascading more than one device

◆ M/S = VIH for BUSY output flag on Master, M/S = VIL for BUSY input on Slave

◆ Busy and Interrupt Flags

◆ Full hardware support of semaphore signaling between ports on-chip

◆ On-chip port arbitration logic

◆ Fully asynchronous operation from either port

◆ Separate byte controls for multiplexed bus and bus matching compatibility

◆ Sleep Mode Inputs on both ports

◆ Supports JTAG features compliant to IEEE 1149.1 in BGA-208 and BGA-256 packages

◆ Single 2.5V (±100mV) power supply for core

◆ LVTTL-compatible, selectable 3.3V (±150mV)/2.5V (±100mV) power supply for I/Os and control signals on each port

◆ Available in a 256-ball Ball Grid Array, 144-pin Thin Quad Flatpack and 208-ball fine pitch Ball Grid Array

◆ Industrial temperature range (–40°C to +85°C) is available for selected speeds

IDT70T631S10BFI产品属性

  • 类型

    描述

  • 型号

    IDT70T631S10BFI

  • 功能描述

    IC SRAM 4MBIT 10NS 208FBGA

  • RoHS

  • 类别

    集成电路(IC) >> 存储器

  • 系列

    -

  • 标准包装

    3,000

  • 系列

    - 格式 -

  • 存储器

    EEPROMs - 串行

  • 存储器类型

    EEPROM

  • 存储容量

    8K(1K x 8)

  • 速度

    400kHz

  • 接口

    I²C,2 线串口

  • 电源电压

    1.7 V ~ 5.5 V

  • 工作温度

    -40°C ~ 85°C

  • 封装/外壳

    8-SOIC(0.154,3.90mm 宽)

  • 供应商设备封装

    8-SOIC

  • 包装

    带卷(TR)

更新时间:2025-8-9 9:03:00
供应商 型号 品牌 批号 封装 库存 备注 价格
IDT
23+
NA
19960
只做进口原装,终端工厂免费送样
IDT
23+
144-TQFP(20x20)
39257
专业分销产品!原装正品!价格优势!
IDT
25+
TQFP144
1280
长期原装现货,特价供应!
IDT
20+
QFP-144
1001
就找我吧!--邀您体验愉快问购元件!
IDT
22+
144TQFP
9000
原厂渠道,现货配单
IDT
23+
144TQFP
9000
原装正品,支持实单
IDT, Integrated Device Techno
23+
144-TQFP20x20
7300
专注配单,只做原装进口现货
IDT, Integrated Device Techno
23+
144-TQFP20x20
7300
专注配单,只做原装进口现货
IDT, Integrated Device Technol
24+
144-TQFP(20x20)
56200
一级代理/放心采购
Renesas Electronics America In
25+
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9350
独立分销商 公司只做原装 诚心经营 免费试样正品保证