位置:IDT70P3517 > IDT70P3517详情

IDT70P3517中文资料

厂家型号

IDT70P3517

文件大小

873.39Kbytes

页面数量

20

功能描述

512K/256K x36 SYNCHRONOUS DUAL QDR-II

IC SRAM 9MBIT 233MHZ 576FCBGA

数据手册

原厂下载下载地址一下载地址二到原厂下载

生产厂商

IDT

IDT70P3517数据手册规格书PDF详情

Functional Description

As a memory standard, the (Quad Data Rate) QDR-II SRAM interface has become increasingly common in high performance networking systems. With the QDR-II interface/configuration, memory throughput is increased without increasing the clock rate via the use of two unidirectional buses on each of providing 2 ports of QDR-II makes this a Dual-QDRII Static Ram two ports to transfer data without the need for bus turnaround.

Features

◆ 18Mb Density (512K x 36)

– Also available 9Mb Density (256K x 36)

◆ QDR-II x 36 Burst-of-2 Interface

– Commercial: 233MHz, 250MHz

◆ Two independent ports

– True Dual-Port Access to common memory

◆ Separate, Independent Read and Write Data Buses on each Port

– Supports concurrent transactions

◆ Two-Word Burst on all DPRAM accesses

◆ DDR (Double Data Rate) Multiplexed Address Bus

– One Read and One Write request per clock cycle

◆ DDR (Double Data Rate) Data Buses

– Four word burst data (Two Read and Two Write) per clock on each port

– Four word transfers each of Read & Write per clock cycle per port (four word bursts on 2 ports)

◆ Octal Data Rate

◆ Port Enable pins (E0,E1) for depth expansion

◆ Dual Echo Clock Output with DLL-based phase alignment

◆ High Speed Transceiver Logic inputs

– scaled to receive signals from 1.4V to 1.9V

◆ Scalable output drivers

– Drives HSTL, 1.8V TTL or any voltage level from 1.4V to 1.9V

– Output impedance adjustable from 35 ohms to 70 ohms

◆ 1.8V Core Voltage (VDD)

◆ 576-ball Flip Chip BGA (25mm x 25mm, 1.0mm ball pitch)

◆ JTAG Interface - IEEE 1149.1 Compliant

IDT70P3517产品属性

  • 类型

    描述

  • 型号

    IDT70P3517

  • 功能描述

    IC SRAM 9MBIT 233MHZ 576FCBGA

  • RoHS

  • 类别

    集成电路(IC) >> 存储器

  • 系列

    -

  • 产品变化通告

    Product Discontinuation 26/Apr/2010

  • 标准包装

    136

  • 系列

    - 格式 -

  • 存储器

    RAM

  • 存储器类型

    SRAM - 同步,DDR II

  • 存储容量

    18M(1M x 18)

  • 速度

    200MHz

  • 接口

    并联

  • 电源电压

    1.7 V ~ 1.9 V

  • 工作温度

    0°C ~ 70°C

  • 封装/外壳

    165-TBGA

  • 供应商设备封装

    165-CABGA(13x15)

  • 包装

    托盘

  • 其它名称

    71P71804S200BQ

更新时间:2021-9-14 10:50:00
供应商 型号 品牌 批号 封装 库存 备注 价格
IDT
25+
576-BGA
1001
就找我吧!--邀您体验愉快问购元件!
IDT
22+
576FCBGA
9000
原厂渠道,现货配单
IDT
23+
576-FCBGA(25x25)
9000
专业分销产品!原装正品!价格优势!
IDT, Integrated Device Technol
21+
90-TFBGA
5280
进口原装!长期供应!绝对优势价格(诚信经营
IDT, Integrated Device Technol
24+
576-FCBGA(25x25)
56200
一级代理/放心采购
IDT, Integrated Device Techno
23+
576-FCBGA25x25
7300
专注配单,只做原装进口现货
IDT
16+
QFP
2500
进口原装现货/价格优势!
IDT
23+
BGAQFP
8659
原装公司现货!原装正品价格优势.
IDT
BGAQFP
6688
15
现货库存
IDT
1923+
BGAQFP
1680
只做进口原装!假一罚十!绝对有货!