位置:IC41LV16100AS-60T > IC41LV16100AS-60T详情

IC41LV16100AS-60T中文资料

厂家型号

IC41LV16100AS-60T

文件大小

231.7Kbytes

页面数量

21

功能描述

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

1M x 16(16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

数据手册

下载地址一下载地址二

生产厂商

ICSI

IC41LV16100AS-60T数据手册规格书PDF详情

DESCRIPTION

The ICSI IC41C16100A(S) and IC41LV16100A(S) are 1,048, 576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes the 16100 series ideal for use in 16-, 32-bit wide data bus systems.

FEATURES

• Extended Data-Out (EDO) Page Mode access cycle

• TTL compatible inputs and outputs; tristate I/O

• Refresh Interval: 1,024 cycles /16 ms

• Refresh Mode:

RAS-Only, CAS-before-RAS (CBR), and Hidden

• JEDEC standard pinout

• Single power supply:

5V ± 10 (IC41C16100A(S))

3.3V ± 10 (IC41LV16100A(S))

• Byte Write and Byte Read operation via two CAS

• Self Refresh 1024 cycles for S version

IC41LV16100AS-60T产品属性

  • 类型

    描述

  • 型号

    IC41LV16100AS-60T

  • 制造商

    ICSI

  • 制造商全称

    Integrated Circuit Solution Inc

  • 功能描述

    1M x 16(16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

更新时间:2025-10-31 15:22:00
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