Z-MOS RF Power MOSFET

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封装/外壳：TO-247-3 包装：管件 描述：RF MOSFET N-CHANNEL PLUS247-3 分立半导体产品 晶体管 - FET，MOSFET - 射频

Z-MOS RF Power MOSFET

Switch Mode MOSFETs

Z-MOS RF Power MOSFET

文件：166.34 Kbytes Page：4 Pages

Z-MOS RF Power MOSFET

文件：166.34 Kbytes Page：4 Pages

Switch Mode MOSFETs

封装/外壳：TO-247-3 包装：管件 描述：RF MOSFET N-CHANNEL PLUS247-3 分立半导体产品 晶体管 - FET，MOSFET - 射频

Fast Switching

• DESCRIPTION • Drain Current ID= 18A@ TC=25℃ • Drain Source Voltage : VDSS= 500V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.32Ω(Max) • Fast Switching • APPLICATIONS • Switch regulators • Switching converters, motor drivers, relay drivers

18 Amps, 500 Volts N-CHANNEL POWER MOSFET

■ DESCRIPTION The UTC 18N50 is an N-channel enhancement mode power MOSFET using UTC’s advanced planar stripe and DMOS technology to provide perfect performance. This technology can withstand high energy pulse in the avalanche and commutation mode. It can provide minimum on-state resistance a

18A, 500V N-CHANNEL POWER MOSFET

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18A 500V N-channel enhanced field effect transistor

文件：817.72 Kbytes Page：6 Pages

18A竊?00V N-CHANNEL MOSFET

文件：167.03 Kbytes Page：5 Pages