Optimized for 20-60kHz Switching

文件：188.7 Kbytes Page：6 Pages

封装/外壳：TO-220-3 包装：管件 描述：IGBT 650V 38A 200W TO220 分立半导体产品 晶体管 - UGBT、MOSFET - 单

Optimized for 20-60kHz Switching

XPT™ 650V IGBT GenX3™ w/Diode (Electrically Isolated Tab) Extreme Light Punch Through IGBT for 20-60kHz Switching Features • Optimized for 20-60kHz Switching • Plastic Overmolded Tab for Electrical Isolation • Square RBSOA • Avalanche Rated • Anti-Parallel Fast Diode • Short Circuit Capabi

Preliminary Technical Information

文件：220.3 Kbytes Page：6 Pages

Preliminary Technical Information

文件：220.3 Kbytes Page：6 Pages

封装/外壳：TO-220-3 包装：卷带（TR） 描述：IGBT 650V 16A 48W TO-220 分立半导体产品 晶体管 - UGBT、MOSFET - 单

CoolMOS Power Transistor

Features • Low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant

N-Channel 650V (D-S)Power MOSFET

FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS)

CoolMOS Power Transistor

Features • Low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant

Isc N-Channel MOSFET Transistor

• FEATURES • With TO-220F package • Low input capacitance and gate charge • Reduced switching and conduction losses • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications