Optimizedfor20-60kHzSwitching

文件：188.7 Kbytes Page：6 Pages

封装/外壳：TO-220-3 包装：管件 描述：IGBT 650V 38A 200W TO220 分立半导体产品 晶体管 - UGBT、MOSFET - 单

Optimizedfor20-60kHzSwitching

XPT™650VIGBTGenX3™w/Diode(ElectricallyIsolatedTab) ExtremeLightPunchThroughIGBTfor20-60kHzSwitching Features •Optimizedfor20-60kHzSwitching •PlasticOvermoldedTabforElectricalIsolation •SquareRBSOA •AvalancheRated •Anti-ParallelFastDiode •ShortCircuitCapabi

PreliminaryTechnicalInformation

文件：220.3 Kbytes Page：6 Pages

PreliminaryTechnicalInformation

文件：220.3 Kbytes Page：6 Pages

封装/外壳：TO-220-3 包装：卷带（TR） 描述：IGBT 650V 16A 48W TO-220 分立半导体产品 晶体管 - UGBT、MOSFET - 单

CoolMOSPowerTransistor

Features •Lowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant

N-Channel650V(D-S)PowerMOSFET

FEATURES •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •Reducedswitchingandconductionlosses •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS)

CoolMOSPowerTransistor

Features •Lowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant

IscN-ChannelMOSFETTransistor

•FEATURES •WithTO-220Fpackage •Lowinputcapacitanceandgatecharge •Reducedswitchingandconductionlosses •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications