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IXXQ30N60B3M

Advance Technical Information

文件:194.87 Kbytes Page:6 Pages

IXYS

艾赛斯

IXXQ30N60B3M

封装/外壳:TO-3P-3,SC-65-3 包装:卷带(TR) 描述:IGBT 分立半导体产品 晶体管 - UGBT、MOSFET - 单

IXYS

艾赛斯

IXXQ30N60B3M

XPT™ Planar IGBT

Littelfuse

力特

60A, 600V, UFS Series N-Channel IGBT

The HGTG30N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderatel

Fairchild

仙童半导体

60A, 600V, UFS Series N-Channel IGBT

The HGTG30N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderatel

Fairchild

仙童半导体

60A, 600V, UFS Series N-Channel IGBT

The HGTG30N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderatel

Intersil

60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

文件:228.05 Kbytes Page:8 Pages

Fairchild

仙童半导体

60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

文件:228.05 Kbytes Page:8 Pages

Fairchild

仙童半导体

更新时间:2025-11-3 15:54:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Littelfuse/IXYS
23+
TO-3P
450
三极管/MOS管/晶体管 > IGBT管/模块
IXYS/LITTELFUSE
1904
TO-247
15800
全新原装正品现货直销
IXYS
25+
TO-3P-3 SC-65-3
9350
独立分销商 公司只做原装 诚心经营 免费试样正品保证
IXYS
22+
ISOPLUS247?
9000
原厂渠道,现货配单
24+
N/A
57000
一级代理-主营优势-实惠价格-不悔选择
IXYS(艾赛斯)
23+
N/A
7500
IXYS(艾赛斯)全系列在售
IXYS
25+
TO-247
326
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