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IXXN110N65C价格
参考价格：￥97.4274
型号：IXXN110N65C4H1 品牌：IXYS 备注：这里有IXXN110N65C多少钱，2025年最近7天走势，今日出价，今日竞价，IXXN110N65C批发/采购报价，IXXN110N65C行情走势销售排行榜，IXXN110N65C报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IXXN110N65C | IGBT DESCRIPTION ·Low Saturation Voltage:VCE(sat)=2.35V@IC=110A ·High Current Handling Capability ·High Power Density ·Short Circuit Capabiltiy APPLICATIONS ·Synchronous Rectification in SMPS ·Power Inverters ·UPS,PFC ·High Frequency Power Inverters | ISC 无锡固电 |   | |
IGBT DESCRIPTION · Short Circuit Capability · High Current Handling Capability APPLICATIONS · Power Inverters · UPS · Motor Drives · Welding Machines · SMPS · High Frequency Power Inverters | ISC 无锡固电 | | ||
XPTTM 650V GenX4TM XPT™ 650V GenX4™ w/ Sonic Diode Extreme Light Punch Through IGBT for 20-60kHz Switching Features • International Standard Package • miniBLOC, with Aluminium Nitride Isolation • 2500V~ Isolation Voltage • Anti-Parallel Sonic Diode • Optimized for 20-60kHz Switching • Square RBSOA • Short C | IXYS | | ||
IGBT DESCRIPTION ·Low Saturation Voltage:VCE(sat)=2.35V@IC=110A ·High Current Handling Capability ·High Power Density ·Short Circuit Capabiltiy APPLICATIONS ·Synchronous Rectification in SMPS ·Power Inverters ·UPS,PFC ·High Frequency Power Inverters | ISC 无锡固电 | | ||
封装/外壳：SOT-227-4，miniBLOC 包装：散装 描述：IGBT MOD 650V 210A 750W SOT227B 分立半导体产品 晶体管 - IGBT - 模块 | IXYS | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 35A@ TC=25℃ ·Drain Source Voltage : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 110mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC- | ISC 无锡固电 | | ||
N-Channel SuperFET짰 II FRFET짰 MOSFET Description SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide s | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 35A@ TC=25℃ ·Drain Source Voltage : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 110mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC- | ISC 无锡固电 | | ||
N-Channel Enhancement Mode MOSFET 文件：236.47 Kbytes Page：4 Pages | DACO | | ||
isc N-Channel MOSFET Transistor 文件：298.55 Kbytes Page：2 Pages | ISC 无锡固电 | |
IXXN110N65C产品属性
- 类型
描述
- 型号
IXXN110N65C
- 功能描述
IGBT 模块 650V/234A Trench IGBT GenX4 XPT
- RoHS
否
- 制造商
Infineon Technologies
- 产品
IGBT Silicon Modules
- 配置
Dual 集电极—发射极最大电压
- VCEO
600 V
- 集电极—射极饱和电压
1.95 V 在25
- C的连续集电极电流
230 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
445 W
- 最大工作温度
+ 125 C
- 封装/箱体
34MM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IXYS |
24+ |
Module |
1262 |
原厂原装正品现货,代理渠道,支持订货!!! |
|||
IXYS/艾赛斯 |
1926+ |
MODULE |
585 |
只做原装正品现货!或订货假一赔十! |
|||
IXYS(艾赛斯) |
23+ |
N/A |
7500 |
IXYS(艾赛斯)全系列在售 |
|||
IXYS |
19+/20+ |
SOT-227B |
1000 |
主打产品价格优惠.全新原装正品 |
|||
IXYS/艾赛斯 |
19+ |
MODULE |
1290 |
主打模块,大量现货供应商QQ2355605126 |
|||
IXYS/艾赛斯 |
2023+ |
MODULE |
52 |
主打螺丝模块系列 |
|||
Littelfuse/IXYS |
23+ |
SOT-227B |
940 |
三极管/MOS管/晶体管 > IGBT管/模块 |
|||
IXYS |
22+ |
SOT227B |
9000 |
原厂渠道,现货配单 |
|||
IXYS |
25+ |
SOT-227-4 miniBLOC |
9350 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
IXYS |
24+ |
MODULE |
1000 |
全新原装现货 |
IXXN110N65C规格书下载地址
IXXN110N65C参数引脚图相关
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- IXT905
- IXS839B
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IXXN110N65C数据表相关新闻
IXXYS MOS 二极管 IGBT IC 元器件 IXYS DIODE FRED Single MOS
IGBT模块.IGBT驱动板.IPM模块.GTR模块.IGBT单管.可控硅.晶闸管.整流模块.熔断器.二极管.电容. 无感电容.变频器.伺服电机.伺服驱动器.
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DdatasheetPDF页码索引
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