Trench Power MOSFET ISOPLUS220

Trench Power MOSFET ISOPLUS220TM Electrically Isolated Back Surface Features • Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation • Trench MOSFET - very low RDS(on) - fast switching - usabl

Trench Power MOSFET ISOPLUS220

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 74A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 12mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

Standard Size Toggle Switch

文件：2.77001 Mbytes Page：14 Pages

N-Channel PowerTrench짰 MOSFET 100V, 74A, 12m廓

文件：508.34 Kbytes Page：8 Pages

isc N-Channel MOSFET Transistor

文件：328.27 Kbytes Page：2 Pages

N-Channel PowerTrench짰 MOSFET 100V, 74A, 12m廓

文件：691.29 Kbytes Page：8 Pages