位置：首页 > IC中文资料 > IXTT140N10P-TRL
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 100V,137A,RDS(ON)=7.5mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Lead-freeplating;RoHScompliant. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 |  |   | |
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■100V,137A,RDS(ON)=7.5mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TO-220&TO-263package. ■Lead-freeplating;RoHScompliant. | CETChino-Excel Technology 华瑞华瑞股份有限公司 |  | | |
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 100V,137A,RDS(ON)=7.5mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Lead-freeplating;RoHScompliant. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | | | |
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 100V,150A,RDS(ON)=7.8mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-3Ppackage. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | | | |
N-ChannelMOSFETusesadvancedtrenchtechnology 文件：1.63854 Mbytes Page：5 Pages | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半导体有限公司 |  | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VB |
25+ |
TO-220 |
320 |
原装正品,假一罚十! |
|||
CET/華瑞 |
24+ |
NA/ |
20 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
CET/華瑞 |
2022+ |
TO-220 |
30000 |
进口原装现货供应,原装 假一罚十 |
|||
VBsemi |
21+ |
TO220 |
10026 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
TI |
24+ |
QFN |
9987 |
公司现货库存,支持实单 |
|||
VBsemi |
24+ |
TO220 |
18000 |
原装正品 有挂有货 假一赔十 |
|||
PANDUIT |
新 |
4191 |
全新原装 货期两周 |
||||
CET/華瑞 |
23+ |
TO-220 |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
CET/华瑞 |
TO-220 |
8301 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
ITWPANCON |
24+ |
65200 |
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IXTT140N10P-TRL规格书下载地址
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2018-12-28
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